| PART |
Description |
Maker |
| S7171-0909-01 |
512 × 512 pixels, back-thinned FFT-CCD
|
Hamamatsu Corporation
|
| IDT72V3634L10PF IDT72V3634L15PF8 |
3.3 VOLT CMOS SyncBiFIFO WITH BUS-MATCHING 256 x 36 x 2, 512 x 36 x 2, 1,024 x 36 x 2
512 X 36 BI-DIRECTIONAL FIFO, 10 ns, PQFP128
|
INTEGRATED DEVICE TECHNOLOGY INC
|
| LH5496HU-80 LH5496U-80 LH5496HD-20 LH5496-20 LH549 |
CMOS 512 X 9 FIFO 512 × 9的CMOS先进先出
|
Sharp, Corp.
Sharp Corporation
SHARP[Sharp Electrionic Components]
|
| AM27S31ADC AM27S31JC AM27S31ALC |
512 X 8 OTPROM, 35 ns, CDIP24
512 X 8 OTPROM, 55 ns, PQCC28
512 X 8 OTPROM, 35 ns, CQCC32
|
ADVANCED MICRO DEVICES INC
|
| IDT72V3642L10PF IDT72V3642L10PQF IDT72V3632 IDT72V |
TV 100C 100#22D SKT PLUG
3.3 VOLT CMOS SyncBiFIFO 256 x 36 x 2 512 x 36 x 2 1,024 x 36 x 2 3.3伏的CMOS SyncBiFIFO 256 × 36 × 2 512 × 36 × 2 1024 × 36 × 2
3.3 VOLT CMOS SyncBiFIFO 256 x 36 x 2 512 x 36 x 2 1,024 x 36 x 2 256 X 36 BI-DIRECTIONAL FIFO, 10 ns, PQFP120
3.3 VOLT CMOS SyncBiFIFO 256 x 36 x 2 512 x 36 x 2 1,024 x 36 x 2 256 X 36 BI-DIRECTIONAL FIFO, 10 ns, PQFP132
|
Integrated Device Technology, Inc.
|
| 28C04A-15_L 28C04A-15_P 28C04A-25_L 28C04A-25_P 28 |
512 X 8 EEPROM 5V, 250 ns, PQCC32
4K (512 x 8) CMOS EEPROM
|
MICROCHIP[Microchip Technology]
|
| AM4701-45JC AM4701-45PC AM4701-35 AM4701-35JC AM47 |
Dual 512 x 8 Bidirectional Parity Generator/Checker, Bypass Mode, Programmable AE/AF Flags 512 X 8 BI-DIRECTIONAL FIFO, 45 ns, PDIP28
Dual 512 x 8 Bidirectional Parity Generator/Checker, Bypass Mode, Programmable AE/AF Flags 512 X 8 BI-DIRECTIONAL FIFO, 45 ns, PQCC32
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| 723631L15PQF9 IDT723641L15PF8 IDT723641L15PQF IDT7 |
512 x 36 SyncFIFO, 5.0V
2K x 36 SyncFIFO, 5.0V
1K x 36 SyncFIFO, 5.0V
512 X 36 OTHER FIFO, 11 ns, PQFP132 PLASTIC, QFP-132
|
IDT
INTEGRATED DEVICE TECHNOLOGY INC
Integrated Device Technology, Inc.
|
| AM27C040 AM27C040-120 AM27C040-120DCB AM27C040-120 |
4 Megabit (512 K x 8-Bit) CMOS EPROM
SEAL,NEOPRENE,CYLINDRICAL CONNECTR& 4兆位12亩8位）的CMOS存储
4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 UVPROM, 120 ns, CDIP32
4 Megabit (512 K x 8-Bit) CMOS EPROM 4兆位12亩8位）的CMOS存储
Dual 4-Line To 1-Line Data Selectors/Multiplexers With 3-State Outputs 16-SOIC 0 to 70 4兆位12亩8位）的CMOS存储
4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 UVPROM, 150 ns, CDIP32
8-Line To 1-Line Data Selectors/Multiplexers With 3-State Outputs 16-SOIC 0 to 70 512K X 8 OTPROM, 120 ns, PDIP32
8-Line To 1-Line Data Selectors/Multiplexers With 3-State Outputs 16-PDIP 0 to 70 4兆位12亩8位）的CMOS存储
4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 OTPROM, 150 ns, PQCC32
4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 OTPROM, 120 ns, PQCC32
4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 UVPROM, 90 ns, CDIP32
4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 OTPROM, 90 ns, PDIP32
4 Megabit (512 K x 8-Bit) CMOS EPROM 512K X 8 OTPROM, 90 ns, PQCC32
MEMORY KEY, USBFTV, SEALED, 1GB; Colour:Green; Series:USB FTV RoHS Compliant: No
|
ADVANCED MICRO DEVICES INC
Advanced Micro Devices, Inc.
AMD[Advanced Micro Devices]
|
| AM29F040B-1 AM29F040B-120EC AM29F040B-120EE AM29F0 |
From old datasheet system
EEPROM,FLASH,512KX8,CMOS,DIP,32PIN,PLASTIC
4 Mbit (512 K x 8-Bit)
4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
|
AMD[Advanced Micro Devices]
AMD Inc
|
| S7171-0909 S7170-0909 |
CCD area image sensor 512 × 512 pixels, Back-thinned FFT-CCD
CCD area image sensor 512 】 512 pixels, Back-thinned FFT-CCD
|
http://
Hamamatsu Corporation
|
